Contact hole formation method of semiconductor device

专利摘要:
The present invention relates to a method for forming a contact hole in a semiconductor device, and to form a contact hole by sequentially performing anisotropic etching, isotropic etching, and anisotropic etching in forming a contact hole, thereby reducing the width laterally etched to form a photoresist pattern. There is an effect to prevent the lifting and to improve the layer covering properties when forming the metal layer of the subsequent process.
公开号:KR19980053434A
申请号:KR1019960072538
申请日:1996-12-26
公开日:1998-09-25
发明作者:조민국
申请人:김영환；현대전자산업 주식회사；
IPC主号:

专利说明:

Contact hole formation method of semiconductor device
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact hole, and more particularly, to a method for forming a contact hole in a semiconductor device capable of forming contact holes by sequentially performing anisotropic etching, isotropic etching, and anisotropic etching. will be.
In general, as semiconductor devices are highly integrated, as the design rules become smaller, the size of the contact holes is smaller. This makes it difficult to completely bury the metal layer in the contact hole due to the reduction of the step coverage characteristics during the deposition of the metal layer in subsequent processes. Therefore, as shown in FIGS. 1A and 1B, a wide contact hole was formed by forming two contact holes in the etching process. FIG. 1A shows a state in which the insulating film 2 is formed on the silicon substrate 1 and then the photosensitive film pattern 3 is formed on the insulating film 2.
The insulating film 2 mainly uses a BOSG (BoroPhospho Silicate Glass) film for insulation and relaxation of steps. FIG. 1B illustrates a state in which the contact hole 10 is formed by sequentially performing isotropic etching and anisotropic etching on the insulating film 2 using the photosensitive film pattern 3 as a mask. At this time, since the insulating film 2 made of BPSG is etched faster in the horizontal direction than in the vertical direction, when the contact holes 10 have no margin in the lateral direction, both contact holes 10 meet in the middle by isotropic etching. Therefore, the photoresist pattern 3 shown by arrow A has a problem that lifting occurs.
Accordingly, an object of the present invention is to provide a method for forming a contact hole in a semiconductor device capable of forming good contact holes by sequentially performing anisotropic etching, isotropic etching, and anisotropic etching when forming contact holes.
The contact hole forming method of the present invention for realizing the above object comprises the steps of forming an insulating film on a silicon substrate through a predetermined process and then forming a photosensitive film pattern on the insulating film, and using the photosensitive film pattern as a mask, Removing a predetermined depth by an isotropic etching process, performing an isotropic etching process on the insulating film using the photosensitive film pattern as a mask, and forming a contact hole by etching the insulating film by an anisotropic etching process using the photosensitive film pattern as a mask Thereafter, the step of removing the photoresist pattern.
1A and 1B are cross-sectional views of a device for explaining a method of forming a contact hole in a conventional semiconductor device.
2A to 2D are cross-sectional views of devices for explaining a method for forming contact holes in a semiconductor device according to the present invention.
* Description of the symbols for the main parts of the drawings *
1 and 11: silicon substrates 2 and 12: insulating film
3 and 13: photoresist pattern film 10 and 20: contact hole
Hereinafter, a method of forming a contact hole according to the present invention will be described in detail with reference to the accompanying drawings.
2A through 2D are cross-sectional views of devices for explaining a method of forming a contact hole. FIG. 2A illustrates an insulating film 12 formed on a silicon substrate 11 and then a photosensitive film pattern 13 formed on the insulating film 12. The state is shown. The insulating film 12 mainly uses BPSG for insulation and step relaxation.
FIG. 2B illustrates a state in which the insulating layer 12 is removed a predetermined depth by an anisotropic etching process using the photoresist pattern 13 as a mask.
FIG. 2C illustrates a state where an isotropic etching process is performed on the insulating film 12 using the photosensitive film pattern 13 as a mask. At this time, the isotropic etching process is performed in the anisotropic etching process as shown in FIG. This can prevent lifting of the photoresist pattern 13 due to less lateral etching.
FIG. 2D illustrates a state in which the contact hole 20 is formed by etching the insulating film 12 by an anisotropic etching process using the photoresist pattern 13 as a mask. Thereafter, the photoresist pattern 13 is removed to complete the contact hole 20.
As described above, according to the present invention, when forming contact holes, anisotropic etching, isotropic etching, and anisotropic etching are sequentially performed to reduce the width of the side etching, thereby preventing the photoresist pattern from lifting and forming the metal layer in the subsequent process. There is an effect that can improve the layer covering properties.

权利要求:
Claims (1)
[1" claim-type="Currently amended] In the method of forming a contact hole of a semiconductor device,
Forming an insulating film on the silicon substrate through a predetermined process and then forming a photoresist pattern on the insulating film;
Removing the insulating layer by a non-isotropic etching process by using the photoresist pattern as a mask;
Performing an isotropic etching process on the insulating film using the photoresist pattern as a mask;
Forming a contact hole by etching the insulating film by an anisotropic etching process using the photoresist pattern as a mask, and then removing the photoresist pattern.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1996-12-26|Application filed by 김영환, 현대전자산업 주식회사

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1996-12-26|Priority to KR1019960072538A

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1998-09-25|Publication of KR19980053434A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019960072538A|KR19980053434A|1996-12-26|1996-12-26|Contact hole formation method of semiconductor device|